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W13NB60 - STW13NB60

General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

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Full PDF Text Transcription for W13NB60 (Reference)

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® STW13NB60 STH13NB60FI N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218 PowerMESH™ MOSFET TYPE ST W13NB60 ST H13NB60FI www.DataSheet4U.com s s s s s V DSS 600 V 600 V ...

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W13NB60 ST H13NB60FI www.DataSheet4U.com s s s s s V DSS 600 V 600 V R DS(on) <0.54 Ω <0.54 Ω ID 13 A 8.6 A TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 1 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge an

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