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VNS1NV04DP-E - fully autoprotected Power MOSFET

Description

The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package.

The OMNIFET II are designed in STMicroelectronics VIPower™ M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications.

Features

  • Max On-state resistance(1) Current limitation (typ)(1) Drain-Source clamp voltage(1) 1. Per each device. RDS(ON) ILIMH VCLAMP 250m 1.7A 40V.
  • Linear current limitation.
  • Thermal shutdown.
  • Short circuit protection.
  • Integrated clamp.
  • Low current drawn from input pin.
  • Diagnostic feedback through input pin.
  • ESD protection.
  • Direct access to the gate of the power mosfet (analog driving).
  • Compatible with standard power.

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Full PDF Text Transcription

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VNS1NV04DP-E OMNIFET II fully autoprotected Power MOSFET Features Max On-state resistance(1) Current limitation (typ)(1) Drain-Source clamp voltage(1) 1. Per each device. RDS(ON) ILIMH VCLAMP 250m 1.7A 40V • Linear current limitation • Thermal shutdown • Short circuit protection • Integrated clamp • Low current drawn from input pin • Diagnostic feedback through input pin • ESD protection • Direct access to the gate of the power mosfet (analog driving) • Compatible with standard power mosfet • In compliance with the 2002/95/EC european directive SO-8 Description The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package.
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