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VNP10N06 - FULLY AUTOPROTECTED POWER MOSFET

Description

The VNP10N06 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications.

Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip n harsh enviroments.

Features

  • During Normal Operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path as soon as VIN > VIH. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50KHz. The only difference from the user’s standpoint is that a small DC current (typically 150 µA) flows into the INPUT pin in order to supply the internal circuitry. During turn-off of an unclamped inductive load the output voltage is clamped to a s.

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Full PDF Text Transcription

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VNP10N06 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNP10N06 Vclamp 60 V RDS(on) 0.3 Ω Ilim 10 A s LINEAR CURRENT LIMITATION s THERMAL SHUT DOWN s SHORT CIRCUIT PROTECTION s INTEGRATED CLAMP s LOW CURRENT DRAWN FROM INPUT PIN s LOGIC LEVEL INPUT THRESHOLD s ESD PROTECTION s SCHMITT TRIGGER ON INPUT s HIGH NOISE IMMUNITY s STANDARD TO-220 PACKAGE DESCRIPTION The VNP10N06 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip n harsh enviroments.
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