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VNK10N06FM - FULLY AUTOPROTECTED POWER MOSFET

General Description

The VND10N06, VND10N06-1, VNP10N06FI and VNK10N06FM are monolithic devices made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications.

Key Features

  • During Normal Operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path as soon as VIN > VIH. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50KHz. The only difference from the user’s standpoint is that a small DC current (typically 150 µA) flows into the INPUT pin in order to supply the internal circuitry. During turn-off of an unclamped inductive load the output voltage is clamped to a s.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VND10N06/VND10N06-1 VNP10N06FI/K10N06FM "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VND10N06 VND10N06-1 VNP10N06FI VNK10N06FM Vclamp 60 V 60 V 60 V 60 V RDS(on) 0.3 Ω 0.3 Ω 0.3 Ω 0.3 Ω Ilim 10 A 10 A 10 A 10 A s LINEAR CURRENT LIMITATION s THERMAL SHUT DOWN s SHORT CIRCUIT PROTECTION s INTEGRATED CLAMP s LOW CURRENT DRAWN FROM INPUT PIN s LOGIC LEVEL INPUT THRESHOLD s ESD PROTECTION s SCHMITT TRIGGER ON INPUT s HIGH NOISE IMMUNITY DESCRIPTION The VND10N06, VND10N06-1, VNP10N06FI and VNK10N06FM are monolithic devices made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.