TMMBAT47
DESCRIPTION
General purpose, metal to silicon diodes featuring very low turn-on voltage and fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges. ABSOLUTE RATINGS (limiting values)
Symbol VRRM IF IFRM IFSM Parameter Repetitive Peak Reverse Voltage Forward Continuous Current Repetitive Peak Fordward Current Surge non Repetitive Forward Current Tl = 25 °C tp ≤ 1s δ ≤ 0.5 tp = 10ms tp = 1s Ptot Tstg Tj TL Power Dissipation Storage and Junction Temperature Range Maximum Temperature for Soldering during 15s Tl = 25 °C
MINIMELF (Glass)
TMMBAT47 20
TMMBAT48 40
Unit V m A A A
350 1 7.5 1.5 330
- 65 to 150
- 65 to 125 260 m W °C °C °C
THERMAL RESISTANCE
Symbol Rth(j-l) Junction-leads Test Conditions Value 300 Unit °C/W
August 1999 Ed: 1A
1/5
TMMBAT 47/TMMBAT 48
ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS
Symbol VBR Tj = 25°C Tj = 25°C VF- Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C...
