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TIP147 - COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

General Description

The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.

The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

TO-247 Figure 1.

Key Features

  • Monolithic Darlington configuration.
  • Integrated antiparallel collector-emitter diode.

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Full PDF Text Transcription (Reference)

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TIP142, TIP147 Complementary power Darlington transistors Features ■ Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Datasheet — production data 3 2 1 TO-247 Figure 1. Internal schematic diagrams R1 typ. = 5 kΩ R2 typ. = 60 Ω R1 typ. = 8 kΩ R2 typ. = 100 Ω Table 1. Device summary Part number Marking TIP142 TIP142 TIP147 TIP147 Polarity NPN PNP Package TO-247 Packaging Tube April 2012 This is information on a product in full production.