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STW8NK80Z - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

Datasheet Summary

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • www. DataSheet4U. com Type VDSS 800 V 800 V 800 V RDS(on) < 1.5 Ω < 1.5 Ω < 1.5 Ω ID 6.2 A 6.2 A 6.2 A TO-220 1 2 3 STP8NK80Z STP8NK80ZFP STW8NK80Z.
  • TO-220FP Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability TO-247.

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Datasheet Details

Part number STW8NK80Z
Manufacturer STMicroelectronics
File Size 456.94 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
Datasheet download datasheet STW8NK80Z Datasheet
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Full PDF Text Transcription

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STP8NK80Z - STP8NK80ZFP STW8NK80Z N-channel 800V - 1.3Ω - 6.2A - TO-220 /TO-220FP/TO-247 Zener-protected SuperMESH™ Power MOSFET Features www.DataSheet4U.com Type VDSS 800 V 800 V 800 V RDS(on) < 1.5 Ω < 1.5 Ω < 1.5 Ω ID 6.2 A 6.2 A 6.2 A TO-220 1 2 3 STP8NK80Z STP8NK80ZFP STW8NK80Z ■ ■ ■ ■ ■ TO-220FP Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability TO-247 Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
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