Datasheet4U Logo Datasheet4U.com

STW80NE06-10 - N-Channel Power MOSFET

Datasheet Summary

Description

This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™ ” strip-based process.

📥 Download Datasheet

Datasheet preview – STW80NE06-10

Datasheet Details

Part number STW80NE06-10
Manufacturer STMicroelectronics
File Size 111.31 KB
Description N-Channel Power MOSFET
Datasheet download datasheet STW80NE06-10 Datasheet
Additional preview pages of the STW80NE06-10 datasheet.

📁 Similar Datasheet

  • STW80H150C - SCHOTTKY RECTIFIER (Sangdest Microelectronics)
  • STW8C2SB - Mid-Power LED (Seoul Semiconductor)
  • STW8NB100 - N - CHANNEL 1000V - 1.2ohm- 8A - TO-247 PowerMESH MOSFET (ST Microelectronics)
  • STW8NB80 - N - CHANNEL 800V - 1.2ohm - 7.5A - TO-247 PowerMESH MOSFET (ST Microelectronics)
  • STW8NB90 - N-CHANNEL MOSFET (ST Microelectronics)
  • STW8NB90FI - N-CHANNEL MOSFET (ST Microelectronics)
  • STW8Q14BE - High Power LEDs (Seoul Semiconductor)
  • STW8Q2PA - High Power LEDs (Seoul Semiconductor)
  • STW8T16C - LED (Seoul Semiconductor)
  • STW-195 - Retaining Ring Spec Sheet (AmericanRing)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
® STW80NE06-10 N - CHANNEL 60V - 0.0085Ω - 80A - TO-247 STripFET™ ” POWER MOSFET TYPE ST W80NE06-10 www.DataSheet4U.com s TYPICAL RDS(on) s s s V DSS 60 V R DS(on) <0.01 Ω ID 80 A = 0.0085 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 3 2 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Published: |