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STW70N60M2 - N-CHANNEL MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key Features

  • Order codes VDS @ TJmax RDS(on) max ID STW70N60M2 650 V 0.040 Ω 68 A 3 2 1 TO-247 Figure 1. Internal schematic diagram D(2) G(1).
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW70N60M2 N-channel 600 V, 0.03 Ω typ., 68 A MDmesh™ M2 Power MOSFET in a TO-247 package Datasheet − production data Features Order codes VDS @ TJmax RDS(on) max ID STW70N60M2 650 V 0.040 Ω 68 A 3 2 1 TO-247 Figure 1. Internal schematic diagram D(2) G(1) • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. S(3) AM01476v1 Order codes STW70N60M2 Table 1.