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STW58N65DM2AG - N-CHANNEL MOSFET

Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.

Features

  • Order code STW58N65DM2AG VDS 650 V RDS(on) max. 0.065 Ω ID 48 A PTOT 360 W.
  • Designed for automotive.

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Full PDF Text Transcription

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STW58N65DM2AG Automotive-grade N-channel 650 V, 0.058 Ω typ., 48 A MDmesh™ DM2 Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features Order code STW58N65DM2AG VDS 650 V RDS(on) max. 0.065 Ω ID 48 A PTOT 360 W  Designed for automotive applications and AEC-Q101 qualified  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.
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