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STW56NM60N - N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • Order code STW56NM60N.
  • VDSS 600 V RDS(on) max < 0.06 Ω ID 45 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-247 1 2 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW56NM60N N-channel 600 V, 0.05 Ω , 45 A TO-247 MDmesh™ II Power MOSFET Preliminary data Features Order code STW56NM60N ■ ■ ■ VDSS 600 V RDS(on) max < 0.06 Ω ID 45 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-247 1 2 3 Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram $ ' 3 !-V Table 1.
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