STW24N60DM2 - N-CHANNEL POWER MOSFET

STMicroelectronics

Description

technology: MDmesh II Plus™ low Qg.

Features

Order codes STB24N60DM2 STP24N60DM2 STW24N60DM2 VDS @ TJmax 650 V RDS(on) max ID 0.20 Ω 18 A.
Extremely low gate charge and input capacitance.
Lower RDS(on) x area vs previous generation.
Low gate input resistance.
100% avalanche tested.
Zener-protected.
Extremely high dv/dt and avalanche capabilities.

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STW24N60DM2 n-channel power mosfet by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	STW24N60DM2
Manufacturer	STMicroelectronics
File Size	668.20 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	STW24N60DM2 Datasheet

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Full PDF Text Transcription

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STB24N60DM2, STP24N60DM2, STW24N60DM2 N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg 2 Power MOSFETs in D PAK, TO-220 and TO-247 packages Datasheet − production data TAB 2 3 1 D2PAK TAB 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram D(2, TAB) Features Order codes STB24N60DM2 STP24N60DM2 STW24N60DM2 VDS @ TJmax 650 V RDS(on) max ID 0.

Published: Dec 28, 2016 |