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STDLED602, STULED602
N-channel 600 V, 4 Ω typ., 2 A Power MOSFET in DPAK and IPAK packages
Datasheet − preliminary data
Features
Order codes VDS RDS(on)max. ID PTOT
STDLED602
TAB
TAB
t(s)3
1
ucDPAK
IPAK
3
2 1
olete ProdFigure 1. Internal schematic diagram bsD(2,TAB)
roduct(s) - OG(1)
600 V STULED602
4.5 Ω
2 A 45 W
• 100% avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery
characteristics • Zener-protected
Applications
• LED lighting application
Description
These Power MOSFETs boast extremely low onresistance, superior dynamic performance and high avalanche capability, making them suitable for the buck-boost and flyback topology.
lete P S(3) Obso AM01476v1
Order codes STDLED602 STULED602
Table 1.