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N-CHANNEL 900V - 1.1 Ω - 7.3 A Max220/Max220I PowerMesh™ MOSFET
TYPE STU7NB90 STU7NB90I www.DataSheet4U.com
s s s s s s
STU7NB90 STU7NB90I
VDSS 900 V 900 V
RDS(on) < 1.45 Ω < 1.45 Ω
ID 7.3 A 7.3 A
TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD
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Max220
Max220I
DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STU7NB90 Datasheet
