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STU7LN80K5 - N-channel Power MOSFET

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • Order code STU7LN80K5 VDS 800 V RDS(on) max. 1.15 Ω ID 5A.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best figure of merit (FoM).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Datasheet preview – STU7LN80K5

Datasheet Details

Part number STU7LN80K5
Manufacturer STMicroelectronics
File Size 287.87 KB
Description N-channel Power MOSFET
Datasheet download datasheet STU7LN80K5 Datasheet
Additional preview pages of the STU7LN80K5 datasheet.

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Full PDF Text Transcription

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STU7LN80K5 N-channel 800 V, 0.95 Ω typ., 5 A MDmesh™ K5 Power MOSFET in a IPAK package Datasheet - production data TAB IPAK 3 2 1 Figure 1: Internal schematic diagram Features Order code STU7LN80K5 VDS 800 V RDS(on) max. 1.15 Ω ID 5A • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra-low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
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