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STU6NF10 - N-channel Power MOSFET

Description

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.

Features

  • Type STD6NF10 STU6NF10 VDSS 100 V 100 V RDS(on) max < 0.250 Ω < 0.250 Ω.
  • Exceptional dv/dt capability.
  • 100% avalanche tested ID 6A 6A.

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Full PDF Text Transcription

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STD6NF10 STU6NF10 N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET™ Power MOSFET Features Type STD6NF10 STU6NF10 VDSS 100 V 100 V RDS(on) max < 0.250 Ω < 0.250 Ω ■ Exceptional dv/dt capability ■ 100% avalanche tested ID 6A 6A Application ■ Switching applications Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements. 3 2 1 IPAK 3 1 DPAK Figure 1. Internal schematic diagram Table 1.
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