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STD150N3LLH6 STP150N3LLH6, STU150N3LLH6
N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK, TO-220 STripFET™ VI DeepGATE™ Power MOSFET
Features
Type STD150N3LLH6 STP150N3LLH6 STu150N3LLH6
■ ■ ■ ■
VDSS 30 V 30 V 30 V
RDS(on) max 0.0028 Ω 0.0033 Ω 0.0033 Ω
ID 80 A 80 A 80 A
3 1
3 2 1
DPAK
IPAK
RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses
1 2 3
TO-220
Application
■
Switching applications
Figure 1.
Internal schematic diagram
$ 4!" OR
Description
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
'
3
!-V
Table 1.
STU150N3LLH6 Datasheet
