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STTH4R02 - Ultrafast recovery diode

Description

The STTH4R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits.

Packaged in DPAK, SMB and SMC, this device is intended for use in low voltage, high frequency inverters, freewheeling and polarity protection.

Table 1.

Features

  • Negligible switching losses.
  • High junction temperature.
  • Very low conduction losses.
  • Low forward and reverse recovery times.

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Full PDF Text Transcription

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STTH4R02 Ultrafast recovery diode . $ $ $ . 60% . . 60& . 1& $ 1& '3$. $ Features  Negligible switching losses  High junction temperature  Very low conduction losses  Low forward and reverse recovery times  ECOPACK®2 compliant component for DPAK on demand Datasheet  production data Description The STTH4R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. Packaged in DPAK, SMB and SMC, this device is intended for use in low voltage, high frequency inverters, freewheeling and polarity protection. Table 1. Device summary Symbol Value IF(AV) VRRM VF (typ) Tj (max) trr (typ) 4A 200 V 0.76 V 175 °C 16 ns November 2016 This is information on a product in full production.
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