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STTH1R04 - Ultrafast recovery diode

Description

The STTH1R04 series uses ST's new 400 V planar Pt doping technology.

The STTH1R04 is specially suited for switching mode base drive and transistor circuits.

Features

  • Negligible switching losses.
  • Low forward and reverse recovery times.
  • High junction temperature.

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Full PDF Text Transcription

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STTH1R04 Ultrafast recovery diode Features ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature Description The STTH1R04 series uses ST's new 400 V planar Pt doping technology. The STTH1R04 is specially suited for switching mode base drive and transistor circuits. Packaged in axial and surface mount packages, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. AK DO-41 STTH1R04 DO-15 STTH1R04Q Band indicates cathode side. SMA STTH1R04A SMB STTH1R04U Table 1. Device summary IF(AV) VRRM Tj (max) VF (typ) trr (typ) 1A 400 V 175 °C 0.9 V 14 ns May 2008 Rev 1 1/10 www.st.com Characteristics 1 Characteristics STTH1R04 Table 2.
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