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STTH1202 - Ultrafast recovery diode

Description

The STTH1202 uses ST's new 200V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits.

Features

  • A K TO-220AC STTH1202D A K TO-220FPAC STTH1202FP Very low conduction losses Negligible switching losses Low forward and reverse recovery time High junction temperature Insulated packages.
  • TO-220FPAC Electrical insulation 1500 VRMS.
  • TO-220AC Ins Electrical insulation 2500 VRMS A K TO-220AC Ins STTH1202DI.

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Full PDF Text Transcription

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STTH1202 Ultrafast recovery diode Main product characteristics IF(AV) VRRM Tj (max) VF (typ) trr (typ) 12 A 200 V 175° C 0.82 V 18 ns A K K Features and benefits ■ ■ ■ ■ ■ A K TO-220AC STTH1202D A K TO-220FPAC STTH1202FP Very low conduction losses Negligible switching losses Low forward and reverse recovery time High junction temperature Insulated packages – TO-220FPAC Electrical insulation 1500 VRMS – TO-220AC Ins Electrical insulation 2500 VRMS A K TO-220AC Ins STTH1202DI Description The STTH1202 uses ST's new 200V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits.
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