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STS9D8NH3LL Datasheet Dual N-channel Power MOSFET

Manufacturer: STMicroelectronics

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General Description

This device uses the latest advanced design rules of ST’s STrip based technology.

The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses.

This application specific Power MOSFET has been designed to replace two SO-8 packages in DC-DC converters.

Overview

STS9D8NH3LL Dual N-channel 30 V - 0.012 Ω - 9 A - SO-8 low on-resistance STripFET™ Power.

Key Features

  • www. DataSheet4U. com Type Q1 Q2 VDSS 30V 30V RDS(on) < 0.022Ω < 0.015Ω Qg 7nC 8nC ID 8A 9A STS9D8NH3LL.
  • Optimal RDS(on) x Qg trade-off @ 4.5V Conduction losses reduced Switching losses reduced S0-8.

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