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STQ1HNK60R - N-CHANNEL MOSFET

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • TYPE STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60 s s s s s s Figure 1: Package ID 1A 1A 0.4 A 0.4 A Pw 30 W 30 W 3W 3.3 W Ω Ω Ω Ω VDSS 600 600 600 600 V V V V RDS(on) < < < < 8.5 8.5 8.5 8.5 3 1.

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Datasheet Details

Part number STQ1HNK60R
Manufacturer STMicroelectronics
File Size 500.63 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet STQ1HNK60R Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH™ MOSFET Table 1: General Features TYPE STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60 s s s s s s Figure 1: Package ID 1A 1A 0.4 A 0.4 A Pw 30 W 30 W 3W 3.3 W Ω Ω Ω Ω VDSS 600 600 600 600 V V V V RDS(on) < < < < 8.5 8.5 8.5 8.5 3 1 TYPICAL RDS(on) = 8 Ω EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-92 (Ammopack) DPAK 2 3 2 1 1 2 3 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.
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