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STPLED625 - N-channel Power MOSFET

Description

These Power MOSFETs boast extremely low onresistance and very good dv/dt capability, rendering them suitable for buck-boost and flyback topologies.

Table 1.

Features

  • Order codes VDS RDS(on) max ID PTOT uct(s)1 2 3 rodI²PAKFP TAB 3 2 1 TO-220 olete PFigure 1. Internal schematic diagram bsD(2,TAB) ct(s) - OG(1) lete ProduS(3) Obso AM01476v1 STFILED625 620 V STPLED625 1.6 Ω 25 W 5.0 A 70 W.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

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Full PDF Text Transcription

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STFILED625, STPLED625 N-channel 620 V, 1.28 Ω typ., 5.0 A Power MOSFET in I2PAKFP and TO-220 packages Datasheet − preliminary data Features Order codes VDS RDS(on) max ID PTOT uct(s)1 2 3 rodI²PAKFP TAB 3 2 1 TO-220 olete PFigure 1. Internal schematic diagram bsD(2,TAB) ct(s) - OG(1) lete ProduS(3) Obso AM01476v1 STFILED625 620 V STPLED625 1.6 Ω 25 W 5.0 A 70 W • 100% avalanche tested • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low onresistance and very good dv/dt capability, rendering them suitable for buck-boost and flyback topologies.
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