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STP80N900K6 - N-Channel Power MOSFET

Description

AM01476v1_tab This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology.

Features

  • TAB Order code VDS RDS(on) max. ID STP80N900K6 800 V 900 mΩ 6A TO-220 1 23 D(2, TAB).
  • Worldwide best RDS(on) x area.
  • Worldwide best FOM (figure of merit).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Datasheet preview – STP80N900K6

Datasheet Details

Part number STP80N900K6
Manufacturer STMicroelectronics
File Size 247.14 KB
Description N-Channel Power MOSFET
Datasheet download datasheet STP80N900K6 Datasheet
Additional preview pages of the STP80N900K6 datasheet.

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Full PDF Text Transcription

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STP80N900K6 Datasheet N-channel 800 V, 750 mΩ typ., 6 A MDmesh K6 Power MOSFET in a TO-220 package Features TAB Order code VDS RDS(on) max. ID STP80N900K6 800 V 900 mΩ 6A TO-220 1 23 D(2, TAB) • Worldwide best RDS(on) x area • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Flyback converter G(1) • Adapters for tablets, notebook and AIO • LED lighting Description S(3) AM01476v1_tab This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
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