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STP6NM60N - N-channel Power MOSFET

General Description

This device is realized with the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • www. DataSheet4U. com Type VDSS (@Tjmax) 650V 650V 650V 650V RDS(on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD6NM60N - STD6NM60N-1 STF6NM60N - STP6NM60N N-channel 600V - 0.85Ω - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET Features www.DataSheet4U.com Type VDSS (@Tjmax) 650V 650V 650V 650V RDS(on) <0.92Ω <0.92Ω <0.92Ω <0.92Ω ID 4.6A 1 3 2 1 3 2 STD6NM60N STD6NM60N-1 STF6NM60N STP6NM60N 4.6A 4.6A (1) 4.6A TO-220 TO-220FP 1. Limited only by maximum temperature allowed 1 3 3 2 1 ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance DPAK IPAK Description This device is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.