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STP40NE03L-20 - N-Channel MOSFET

Description

This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process.

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STP40NE03L-20 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET TYPE ST P40NE03L-20 s s s s V DSS 30 V R DS(on) <0.020 Ω ID 40 A TYPICAL RDS(on) = 0.014 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE A 100 oC APPLICATION ORIENTED CHARACTERIZATION 1 2 3 DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
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