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STP3LN80K5 - N-channel Power MOSFET

Description

These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • Order code STP3LN80K5 STU3LN80K5 V DS 800 V RDS(on) max 3.25 Ω ID 2A.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP3LN80K5, STU3LN80K5 N-channel 800 V, 2.75 Ω typ., 2 A MDmesh™ K5 Power MOSFET in TO-220 and IPAK packages Datasheet - production data TAB TAB TO-220 3 2 1 IPAK 123 Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code STP3LN80K5 STU3LN80K5 V DS 800 V RDS(on) max 3.25 Ω ID 2A  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
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