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STP310N10F7 - N-channel Power MOSFET

General Description

This device utilizes the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Key Features

  • TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% Order code STP310N10F7 VDS RDS(on) max. ID 100 V 2.7 mΩ 180 A.
  • Ultra low on-resistance.
  • 100% avalanche tested.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP310N10F7 N-channel 100 V, 2.3 mΩ typ., 180 A STripFET™ VII DeepGATE™ Power MOSFET in a TO-220 package Datasheet - production data Features TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram ' 7$% Order code STP310N10F7 VDS RDS(on) max. ID 100 V 2.7 mΩ 180 A • Ultra low on-resistance • 100% avalanche tested Applications • Switching applications Description This device utilizes the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. *  6  $0Y Order codes STP310N10F7 Table 1. Device summary Marking Package 310N10F7 TO-220 Packaging Tube July 2013 This is information on a product in full production. DocID022287 Rev 7 1/13 www.st.