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N-CHANNEL 600V - 4Ω - 2.2A TO-220/TO-220FP PowerMesh™II MOSFET
TYPE STP2HNC60 STP2HNC60FP
s s s s s
STP2HNC60 STP2HNC60FP
VDSS 600 V 600 V
RDS(on) <5Ω <5Ω
ID 2.2 A 2.2 A
TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220
3 1 2
1 2
3
DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.