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STD27N3LH5, STP27N3LH5 STU27N3LH5
N-channel 30 V, 0.014 Ω, 27 A, DPAK, IPAK, TO-220 STripFET™ V Power MOSFET
Features
Type
VDSS RDS(on) max
STD27N3LH5 30 V
0.019 Ω
STP27N3LH5
30 V
0.020 Ω
STU27N3LH5 30 V
0.020 Ω
■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
ID 27 A 27 A 27 A
Application
■ Switching applications
Description
This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM).
IPAK
3
2 1
3 1
DPAK
TO-220
3 2 1
Figure 1. Internal schematic diagram
D (TAB or 2)
G (1)
Table 1.
STP27N3LH5 Datasheet
