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STP16N65M2 - N-channel Power MOSFET

Description

technology.

Features

  • TAB TO-220 1 23 D(2, TAB) Order code VDS RDS(on) max. ID STP16N65M2 650 V 360 mΩ 11 A.
  • Extremely low gate charge.
  • Excellent output capacitance (Coss) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Datasheet preview – STP16N65M2

Datasheet Details

Part number STP16N65M2
Manufacturer STMicroelectronics
File Size 763.04 KB
Description N-channel Power MOSFET
Datasheet download datasheet STP16N65M2 Datasheet
Additional preview pages of the STP16N65M2 datasheet.

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Full PDF Text Transcription

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STP16N65M2 Datasheet N-channel 650 V, 320 mΩ typ., 11 A MDmesh M2 Power MOSFET in a TO-220 package Features TAB TO-220 1 23 D(2, TAB) Order code VDS RDS(on) max. ID STP16N65M2 650 V 360 mΩ 11 A • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) technology. Thanks to its strip layout and an improved vertical structure, the device AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
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