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STP10P6F6 - P-CHANNEL POWER MOSFET

Description

These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure.

The resulting Power MOSFETs exhibit very low RDS(on) in all packages.

Table 1.

Features

  • Order codes STD10P6F6 STF10P6F6 STP10P6F6 STU10P6F6 VDS -60 V RDS(on) max 0.16 Ω.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss ID -10 A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6 P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet − production data TAB 3 1 DPAK TAB 3 2 1 TO-220FP TAB 3 2 1 TO-220 IPAK 3 2 1 Figure 1. Internal schematic diagram , TAB Features Order codes STD10P6F6 STF10P6F6 STP10P6F6 STU10P6F6 VDS -60 V RDS(on) max 0.16 Ω • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss ID -10 A Applications • Switching applications Description These devices are P-channel Power MOSFETs developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.
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