STP10NM60ND Key Features
- Fast-recovery body diode
- Low gate charge and input capacitance
- Low on-resistance RDS(on)
- 100% avalanche tested
- High dv/dt ruggedness
- Part: STP10NM60ND
- Manufacturer: STMicroelectronics
- Size: 882.00 KB
Other STP10NM60ND Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
STP10NM60ND | N-Channel MOSFET |
STMicroelectronics |
STP10NM60N | N-Channel Power MOSFET |
|
Inchange Semiconductor |
STP10NM60N | N-Channel MOSFET |