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TYPE
STLT20 STLT20FI STLT19 STLT19FI
STLT20 STLT19
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MaS TRANSISTORS
PRELIMINARY DATA
Voss
60 V 60 V
50 V 50 V
Ros(on)
0.150 0.150
0.150 0.150
10
15 A 10 A
15 A 10 A
• LOGIC LEVEL ( + 5V) CMOSITTL
COMPATIBLE INPUT • HIGH INPUT IMPEDANCE • ULTRA FAST SWITCHING
N - channel enhancement mode POWER MOS field effect transistors. The low input voltage - logic level - and easy drive make these devices ideal for automotive and industrial applications. Typical uses are in relay and actuator driving in the automotive enviroment.
TO-220
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
TO-220 ISOWATT220
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS =20 KO)
Gate-source voltage
Drai n cu rrent (cont.
STLT20 Datasheet
