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STL6P3LLH6 - P-CHANNEL POWER MOSFET

Description

This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Features

  • Order code VDS STL6P3LLH6 30 V.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss RDS(on) max. 30 mΩ ID 6A PTOT 2.9 W.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL6P3LLH6 Datasheet P-channel 30 V, 24 mΩ typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package D(5, 6, 7, 8) G(4) S(1, 2, 3) Features Order code VDS STL6P3LLH6 30 V • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss RDS(on) max. 30 mΩ ID 6A PTOT 2.9 W Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. AM01475v4 Product status link STL6P3LLH6 Product summary Order code STL6P3LLH6 Marking Package Packing 6P3L PowerFLAT 3.3 x 3.
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