Datasheet4U Logo Datasheet4U.com

STL13NM60N - N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • 3 6  6  .
  •  %RWWRPYLHZ '  3RZHU)/$7Œ[+9 Order code VDS @ Tjmax STL13NM60N 650 V RDS(on) max. 0.385 Ω ID 10 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STL100N3LLH6 N-Channel Power MOSFET ST Microelectronics
STL100N3LLH7 Power MOSFETs N-channel 30V ST Microelectronics
STL100NH3LL N-CHANNEL Power MOSFET ST Microelectronics
STL120NH02V N-CHANNEL MOSFET ST Microelectronics
STL12S03F (STL03S03F - STL15S15F) 2W Single Output Surface Mount DC-DC Converter Superworld Electronics

Other Datasheets by STMicroelectronics

Part Number Description
STL13N60DM2 N-CHANNEL POWER MOSFET
STL13N60M6 N-channel Power MOSFET
STL13N65M2 N-channel Power MOSFET
STL130N6F7 N-channel Power MOSFET
STL130N8F7 N-channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
STL13NM60N N-channel 600 V, 0.320 Ω typ., 10 A MDmesh™ II Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data Features 3 6  6  *  %RWWRPYLHZ '  3RZHU)/$7Œ[+9 Order code VDS @ Tjmax STL13NM60N 650 V RDS(on) max. 0.385 Ω ID 10 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Figure 1. Internal schematic diagram '  *  Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
Published: |