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STL12P6F6 - P-channel Power MOSFET

Description

This device is a P-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Features

  • Order code STL12P6F6 VDSS 60 V RDS(on)max 0.16 Ω @ 10 V ID 3A 1 2 3 4.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power losses PowerFLAT™ 5x6.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL12P6F6 P-channel 60 V, 0.13 Ω typ., 3 A STripFET™ VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features Order code STL12P6F6 VDSS 60 V RDS(on)max 0.16 Ω @ 10 V ID 3A 1 2 3 4 • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power losses PowerFLAT™ 5x6 Applications • Switching applications Figure 1. Internal schematic diagram ' ĆĆĆ Description This device is a P-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. *  6 ĆĆ $09 Table 1.
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