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STI57N65M5 - N-channel Power MOSFET

Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

Features

  • Order codes STB57N65M5 STF57N65M5 STI57N65M5 STP57N65M5 VDSS @ TJmax RDS(on) max 710 V < 0.063 Ω ID 42 A.
  • Worldwide best RDS(on).
  • area amongst the silicon based devices.
  • Higher VDSS rating, high dv/dt capability.
  • Excellent switching performance.
  • Easy to drive, 100% avalanche tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFET in I²PAK, TO-220, TO-220FP and D²PAK packages Datasheet — production data Features Order codes STB57N65M5 STF57N65M5 STI57N65M5 STP57N65M5 VDSS @ TJmax RDS(on) max 710 V < 0.063 Ω ID 42 A ■ Worldwide best RDS(on)*area amongst the silicon based devices ■ Higher VDSS rating, high dv/dt capability ■ Excellent switching performance ■ Easy to drive, 100% avalanche tested Applications ■ Switching applications TAB 3 1 D²PAK TAB 3 2 1 TO-220FP TAB 123 I²PAK 3 2 1 TO-220 Figure 1.
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