Datasheet4U Logo Datasheet4U.com

STI28N60M2 - N-CHANNEL POWER MOSFET

Description

developed using MDmesh™ M2 technology.

Features

  • Order code STB28N60M2 STI28N60M2 STP28N60M2 STW28N60M2 VDS @ TJmax 650 V RDS(on) max. 0.150 Ω ID 22 A Figure 1: Internal schematic diagram D (2 TAB ).
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STI200N6F3 60V N-Channel Power MOSFET ST Microelectronics
STI20N65M5 N-Channel MOSFET INCHANGE
STI21N65M5 N-Channel MOSFET INCHANGE
STI22NM60N N-Channel MOSFET INCHANGE
STI24NM60N N-Channel MOSFET INCHANGE

Other Datasheets by STMicroelectronics

Part Number Description
STI20N60M2-EP N-CHANNEL POWER MOSFET
STI20N65M5 N-channel Power MOSFET
STI21N65M5 N-CHANNEL MOSFET
STI21NM60ND N-channel MOSFET
STI22NM60N N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2 Power MOSFETs in D²PAK, I²PAK, TO-220 and TO-247 Datasheet - production data Features Order code STB28N60M2 STI28N60M2 STP28N60M2 STW28N60M2 VDS @ TJmax 650 V RDS(on) max. 0.150 Ω ID 22 A Figure 1: Internal schematic diagram D (2 TAB )  Extremely low gate charge  Excellent output capacitance (COSS) profile  100% avalanche tested  Zener-protected Applications  Switching applications  LCC converters, resonant converters Description These devices are N-channel Power MOSFETs G(1) developed using MDmesh™ M2 technology.
Published: |