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STI25NM60ND - N-channel MOSFET

General Description

The FDmesh™ II series belongs to the second generation of MDmesh™ technology.

Key Features

  • Type www. DataSheet4U. com VDSS @ TJMAX RDS(on) max ID 3 3 1 2 3 1 2 1 STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND 650 V 0.16 Ω 21 A 21 A 21 A(1) 21 A 21 A TO-220 D2PAK TO-220FP 1. Limited only by maximum temperature allowed.
  • 3 12 2 1 3 The worldwide best RDS(on).
  • area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capab.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB25NM60ND-STI25NM60ND STF/P25NM60ND-STW25NM60ND N-channel 600 V - 0.13 Ω - 21 A FDmesh™ II Power MOSFET D2PAK - I2PAK - TO-220FP - TO-220 - TO-247 Features Type www.DataSheet4U.com VDSS @ TJMAX RDS(on) max ID 3 3 1 2 3 1 2 1 STB25NM60ND STI25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND 650 V 0.16 Ω 21 A 21 A 21 A(1) 21 A 21 A TO-220 D2PAK TO-220FP 1. Limited only by maximum temperature allowed ■ ■ ■ ■ ■ 3 12 2 1 3 The worldwide best RDS(on)*area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Figure 1.