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STI19NM65N - Power MOSFET

General Description

This series of devices implements the second generation of MDmesh™ Technology.

This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Type STB19NM65N STF19NM65N STI19NM65N STP19NM65N STW19NM65N VDSS (@Tjmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω ID 3 15.5 A 15.5 A(1) 15.5 A 15.5 A 15.5 A 1 2 3 12 TO-220 3 1 2 I²PAK TO-220FP 3 1 2 3 1. Limited only by maximum temperature allowed.
  • 100% avalanche tested Low input capacitance and gate charge Low gate input resistance D²PAK 1 TO-247 Figure 1. Internal schematic diagram.

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www.DataSheet4U.com STF19NM65N-STI19NM65N-STW19NM65N STB19NM65N - STP19NM65N N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh™ Power MOSFET Features Type STB19NM65N STF19NM65N STI19NM65N STP19NM65N STW19NM65N VDSS (@Tjmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω < 0.27 Ω ID 3 15.5 A 15.5 A(1) 15.5 A 15.5 A 15.5 A 1 2 3 12 TO-220 3 1 2 I²PAK TO-220FP 3 1 2 3 1. Limited only by maximum temperature allowed ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance D²PAK 1 TO-247 Figure 1. Internal schematic diagram Application ■ Switching applications Description This series of devices implements the second generation of MDmesh™ Technology.