STHI07N50 - HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMicroelectronics
Features
a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to automative ignition switching. They can also be used as drivers for solenoids and relays. TO-220
ISOWATT220.
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STHI07N50 STHI07N50FI
HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT)
PRELIMINARY OATA
TYPE
STHI07N50 STHI07N50FI
Voss
500 V 500 V
10
7A 7A
• HIGH INPUT IMPEDANCE • LOW ON-VOLTAGE • HIGH CURRENT CAPABILITY
APPLICATIONS: • AUTOMOTIVE IGNITION • DRIVERS FOR SOLENOIDS AND RELAYS
N - channel High Injection POWER MOS transistors (lGBT) which features a high impedance insulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation of the drain. These devices are particularly suited to automative ignition switching. They can also be used as drivers for solenoids and relays.
STHI07N50 Datasheet
