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STH90N55F4-2
N-channel 55 V, 0.0064 Ω, 90 A, H2PAK STripFET™ DeepGATE™ Power MOSFET
Features
Type
VDSS RDS(on) max
ID
STH90N55F4-2 55 V
< 0.008 Ω
t(s)■ Exceptional dv/dt capability
■ Extremely low on-resistance RDS(on)
uc■ 100% avalanche tested
90 A
rodApplications te P■ Switching applications
oleDescription bsThe device is N-channel Power MOSFETs Odeveloped using ST’s STripFET™ DeepGATE™ -technology. The device has a new gate structure )and is specially designed to minimize on-state t(sresistance to provide superior switching ducperformance.
2 3 3 1
H²PAK
Figure 1. Internal schematic diagram
$
'
Obsolete Pro 3
!-V
Table 1.
STH90N55F4-2 Datasheet
