Datasheet4U Logo Datasheet4U.com

STH290N4F6-6AG - N-channel Power MOSFET

Download the STH290N4F6-6AG datasheet PDF. This datasheet also covers the STH290N4F6-2AG variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Features

  • Order code VDS STH290N4F6-2AG 40 V STH290N4F6-6AG RDS(on) max. 1.7 mΩ ID 180 A PTOT 300 W.
  • Designed for automotive.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STH290N4F6-2AG-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STH200N55F3-2 Power MOSFETs ST Microelectronics
STH24D12 Solid-State Relays TELEDYNE
STH24D25 Solid-State Relays TELEDYNE
STH24D35 Solid-State Relays TELEDYNE
STH24D50 Solid-State Relays TELEDYNE

Other Datasheets by STMicroelectronics

Part Number Description
STH290N4F6-2AG N-channel Power MOSFET
STH200N10WF7-2 N-channel Power MOSFET
STH22N95K5-2AG Automotive-grade N-channel Power MOSFET
STH240N10F7-2 N-CHANNEL POWER MOSFET
STH240N10F7-6 N-CHANNEL POWER MOSFET

Full PDF Text Transcription

Click to expand full text
STH290N4F6-2AG, STH290N4F6-6AG Automotive-grade N-channel 40 V, 1.3 mΩ typ., 180 A STripFET™ F6 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS STH290N4F6-2AG 40 V STH290N4F6-6AG RDS(on) max. 1.7 mΩ ID 180 A PTOT 300 W • Designed for automotive applications and AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Published: |