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STH265N6F6-6AG - N-CHANNEL POWER MOSFET

This page provides the datasheet information for the STH265N6F6-6AG, a member of the STH265N6F6-2AG N-CHANNEL POWER MOSFET family.

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Features

  • Order code STH265N6F6-2AG STH265N6F6-6AG VDS 60 V 60 V RDS(on) max 2.1 mΩ 2.1 mΩ ID 180 A 180 A.
  • Designed for automotive.

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Datasheet preview – STH265N6F6-6AG

Datasheet Details

Part number STH265N6F6-6AG
Manufacturer STMicroelectronics
File Size 550.29 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STH265N6F6-6AG Datasheet
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Full PDF Text Transcription

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STH265N6F6-2AG, STH265N6F6-6AG Automotive N-channel 60 V, 1.6 mΩ typ., 180 A STripFET™ F6 Power MOSFET in H²PAK-2 and H²PAK-6 packages Datasheet - production data TAB TAB 2 3 1 H2PAK-2 7 1 H2PAK-6 Figure 1: Internal schematic diagram D(TAB) D(TAB) G(1) G(1) Features Order code STH265N6F6-2AG STH265N6F6-6AG VDS 60 V 60 V RDS(on) max 2.1 mΩ 2.1 mΩ ID 180 A 180 A  Designed for automotive applications  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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