Datasheet4U Logo Datasheet4U.com

STGWT80V60DF - IGBT

Download the STGWT80V60DF datasheet PDF. This datasheet also covers the STGW80V60DF variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure.

The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • Tail-less switching off.
  • VCE(sat) = 1.85 V (typ. ) @ IC = 80 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Very fast soft recovery antiparallel diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGW80V60DF-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STGW12NB60H N-CHANNEL IGBT ST Microelectronics
STGW12NB60HD N-CHANNEL IGBT ST Microelectronics
STGW20NB60H N-CHANNEL IGBT ST Microelectronics
STGW20NB60HD N-CHANNEL IGBT ST Microelectronics
STGW20NB60K N-CHANNEL IGBT ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STGWT80H65DFB IGBT
STGWT80H65FB IGBT
STGWT15H60F Trench gate field-stop IGBT
STGWT20H60DF 600V 20A high speed trench gate field-stop IGBT
STGWT20H65FB IGBT

Full PDF Text Transcription

Click to expand full text
STGW80V60DF STGWT80V60DF Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data TAB 3 2 1 TO-247 3 2 1 TO-3P Figure 1. Internal schematic diagram C (2 or TAB) Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 80 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters G (1) E (3) Description This device is an IGBT developed using an advanced proprietary trench gate field stop structure.
Published: |