Datasheet4U Logo Datasheet4U.com

STGWT40V60DF - Trench gate field-stop IGBT

Download the STGWT40V60DF datasheet PDF. This datasheet also covers the STGW40V60DF variant, as both devices belong to the same trench gate field-stop igbt family and are provided as variant models within a single manufacturer datasheet.

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • Tail-less switching off.
  • VCE(sat) = 1.8 V (typ. ) @ IC = 40 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Very fast soft recovery antiparallel diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGW40V60DF-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STGW12NB60H N-CHANNEL IGBT ST Microelectronics
STGW12NB60HD N-CHANNEL IGBT ST Microelectronics
STGW20NB60H N-CHANNEL IGBT ST Microelectronics
STGW20NB60HD N-CHANNEL IGBT ST Microelectronics
STGW20NB60K N-CHANNEL IGBT ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STGWT40HP65FB IGBT
STGWT15H60F Trench gate field-stop IGBT
STGWT20H60DF 600V 20A high speed trench gate field-stop IGBT
STGWT20H65FB IGBT
STGWT20V60DF 600V 20A very high speed trench gate field-stop IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STGFW40V60DF, STGW40V60DF, STGWT40V60DF Datasheet Trench gate field-stop IGBT, V series 600 V, 40 A very high speed 1 3 2 1 TO-3PF TAB 3 2 1 TO-247 TO-3P 3 2 1 C(2, TAB) G(1) Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.8 V (typ.) @ IC = 40 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Welding • Power factor correction • UPS • Solar inverters • Chargers E(3) NG1E3C2T Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.
Published: |