STGP10M65DF2 Datasheet PDF (Trench gate field-stop IGBT) | Download STMicroelectronics STGP10M65DF2

STGP10M65DF2 - Trench gate field-stop IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

Features

6 µs of short-circuit withstand time.
VCE(sat) = 1.55 V (typ. ) @ IC = 10 A.
Tight parameter distribution.
Safer paralleling.
Low thermal resistance.
Soft and very fast recovery antiparallel diode.

Datasheet Details

Part number	STGP10M65DF2
Manufacturer	STMicroelectronics
File Size	781.45 KB
Description	Trench gate field-stop IGBT
Datasheet	STGP10M65DF2 Datasheet
Additional preview pages of the STGP10M65DF2 datasheet.

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Full PDF Text Transcription

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STGP10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low loss Datasheet - production data Figure 1: Internal schematic diagram Features  6 µs of short-circuit withstand time  VCE(sat) = 1.55 V (typ.) @ IC = 10 A  Tight parameter distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel diode Applications  Motor control  UPS  PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where low loss and short-circuit capability are essential.

Published: Mar 22, 2016 |