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STGD4H60DF - IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • Low VCE(sat) = 1.6 V (typ. ) @ IC = 4 A.
  • Tight parameter distribution.
  • Low thermal resistance.
  • Short-circuit rated.
  • Soft and fast recovery antiparallel diode NG1E3C2T.

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STGD4H60DF Datasheet Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package TAB 23 1 DPAK C(2, TAB) G(1) E(3) Features • Maximum junction temperature: TJ = 175 °C • Low VCE(sat) = 1.6 V (typ.) @ IC = 4 A • Tight parameter distribution • Low thermal resistance • Short-circuit rated • Soft and fast recovery antiparallel diode NG1E3C2T Applications • Industrial motor control • Dishwashers • Refrigerators and freezers • Fans Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters.
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