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STGB40V60F
Datasheet
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
TAB 2 3 1
D²PAK
C(2, TAB)
G(1)
E(3)
G1C2TABE3_NO_DIODE
Features
• Maximum junction temperature: TJ = 175 °C
• Tail-less switching off
•
VCE(sat) = 1.8 V (typ.) @ IC = 40 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
Applications
• Welding • PFC converters - single phase input • Solar inverters (string and central) • Uninterruptable power supplies (UPS) • EV charging - DC fast charging stations
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.